Txheej txheem txheej txheem ntawm TOPCON Solar Panels nyob rau hauv ntau yam txheej txheem Part 3

Dec 16, 2024 Tso lus

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Annealing

 

 

Muab cov silicon wafer tso rau hauv ib lub raj tshuaj tiv thaiv ua los ntawm quartz iav, uas yog rhuab mus rau ib tug tej yam kub uas siv ib tug tiv thaiv hlau cua sov rauv (qhov feem ntau siv kub yog 900-1200 degree, uas yuav txo tau qis dua 600 degree nyob rau hauv tshwj xeeb tej yam kev mob. ). Thaum cov pa oxygen dhau los ntawm lub raj tshuaj tiv thaiv, cov tshuaj tiv thaiv tshuaj tshwm sim ntawm qhov chaw ntawm silicon wafer:

 

Si (solid) + O2 (gaseous) → SiO2 (solid)

 

Kev faib tawm ntawm impurities tsim tawm thaum lub sij hawm annealing kuj plays lub luag hauj lwm nyob rau hauv impurity absorption, siv PSG tus adsorption thiab fixation ntawm sodium thiab potassium ions kom tshem tawm cov teeb meem ions.

 

Kev soj ntsuam ntawm kev sib txuas ntawm cov pa phem: Cov kev sib txuas tseem ceeb hauv cov txheej txheem no yog cov pa oxygen seem thiab nitrogen nyob rau hauv thermal oxygen txuas.

 

 

 

 

BOE ntxuav

 

 

BOE (5-kab kab) cov khoom siv hom yog ib qho khoom siv kaw ib nrab, qhov uas silicon wafers tau muab tso rau hauv pob tawb los ntawm cov cuab yeej siv hluav taws xob thiab hloov mus rau hauv cov kev daws teeb meem hauv txhua qhov ntawm cov khoom siv los ntawm cov cuab yeej siv tshuab. Lub tank tshuaj yog txuas ntxiv ntxiv nrog cov tshuaj sib xws raws li qhov concentration ntawm cov tshuaj thiab hloov pauv tsis tu ncua. Cov kua khib nyiab hloov pauv tau tawm mus rau hauv cov dej khib nyiab thiab thaum kawg nkag mus rau hauv cov dej phwj tuaj rau kev kho mob. Lub tank ntxuav yog ntxuav nrog dej huv. Thaum muaj cov silicon wafers hauv lub tank, cov dej huv huv tau maj mam ntxiv, thiab cov ntsev uas muaj cov dej khib nyiab cia li ntws mus rau cov dej khib nyiab thiab thaum kawg nkag mus rau hauv cov dej phwj tuaj kho. Tag nrho cov tshuaj muaj nyob rau hauv cov ntaub ntawv ua kua thiab tau txiav tawm los ntawm lub diaphragm twj tso kua mis. Kev tu ib ntus yog: pickling tank * 2, dej ntxuav, tom qab pickling (HCl / HF / DI), dej ntxuav, qeeb rub, ziab * 6, nrog lub tank loj ntawm 720L.

 

 

1) Acid ntxuav

 

Cov kua qaub diluted (3.15% HCl thiab 7.1% HF) yuav tsum tau ua kom huv huv. Kev ua haujlwm ntawm HCl yog siv Cl - rau cov hlau ions nyuaj, thaum lub luag haujlwm ntawm HF yog tshem tawm cov oxide txheej ntawm cov silicon wafer, ua rau nws ntau hydrophobic thiab tsim cov silicon complex H2SiF6. Los ntawm kev sib koom tes nrog cov hlau ions, cov hlau ions raug tshem tawm ntawm qhov chaw ntawm silicon wafer, txo cov hlau ion ntsiab lus ntawm silicon wafer. HF acid ntxuav yog nqa tawm rau 150 vib nas this kom tshem tawm BSG txheej rau pem hauv ntej thiab PSG txheej ntawm sab nraub qaum. Tom qab ntxuav cov kua qaub, cov dej ntshiab huv yog ua.

 

HF+SiO2 → SiF4+H2O

 

SiF4+HF → H2SiF6

 

 

2) Post pickling

 

Tom qab ntxuav tom qab, cov kua qaub diluted (14.7% HF) yuav tsum tau siv rau kev tu kom huv. Lub luag haujlwm ntawm HF yog tshem tawm cov oxide txheej ntawm lub ntsej muag ntawm silicon wafer, ua rau nws muaj dej ntau dua thiab tsim cov silicon complex H2SiF6. Los ntawm kev sib xyaw nrog cov hlau ions, cov hlau ions raug tshem tawm ntawm qhov chaw ntawm silicon wafer, txo cov hlau ion ntsiab lus ntawm silicon wafer.

 

Cov tshuaj tiv thaiv uas tshwm sim thaum lub sij hawm pickling yog raws li nram no: SiO2+6HF=H2SiF6+2H2O

 

Kev ua haujlwm kub ntawm lub tank pickling yog nyob rau hauv chav tsev kub, thiab lub sij hawm pickling yog tswj ntawm 100 vib nas this.

 

 

3) Qhuav

 

Hloov maj mam rub lub cev qhuav dej crystalline silicon wafer mus rau lub tank kom qhuav, thiab tshuab cua kub ntawm 90 degree nce thiab nqis ntawm lub wafer kom qhuav, siv hluav taws xob cua sov.

 

Cov txheej txheem ntxuav cov kua qaub saum toj no yuav tsim cov dej khib nyiab siab acidic uas muaj HCl thiab hydrofluoric acid (W21) thiab siab concentration acidic khib nyiab uas muaj hydrofluoric acid (W23), thiab feem ntau acidic tu dej khib nyiab (W22, 24, 25). Kev ua haujlwm saum toj no yog ua tiav hauv lub tshuab ntxuav, thiab cov txheej txheem ntxuav cov kua qaub yuav ua rau cov kua qaub pov tseg uas muaj HCl thiab HF (G6) thiab cov kua qaub pov tseg uas muaj HF (G7), uas yuav raug sau los ntawm cov kav dej thiab xa mus rau cov kua qaub pov tseg gas ntxhua ntauwd rau kev kho mob.

 

 

 

 

ALD

 

 

Siv cov cuab yeej ALD tso ib txheej ntawm Al2O3 rau ntawm qhov chaw ntawm silicon wafers txhawm rau txhim kho lawv cov kev cuam tshuam thiab impurity absorption. Txoj hauv kev tseem ceeb yog los ua pa roj carbon monoxide Al (CH3) 3 nrog dej vapor (H2O) kom tsim tau Al (OH) 3, uas ua raws li qhov chaw ntawm silicon wafers thiab tsim cov roj methane.

 

Lub ntsiab lus sib npaug yog:

 

Al(CH3)3+3H2O →Al(OH)3+3CH4↑

 

2Al(OH)3 →Al2O3+3H2O↑

 

Cov khoom siv ALD yog lub kaw lus tsis zoo, nruab nrog lub qhov hluav taws xob, qhov hluav taws xob, thiab qhov hluav taws xob / qhov hluav taws xob. Cov cua sov yog hluav taws xob cua sov, thiab cov khoom siv los nrog cov roj-dawb qhuav tshuab nqus tsev twj tso kua mis. Tom qab kev tsim khoom pib, tus neeg hlau caj npab ua ntej xa cov roj teeb rau hauv cov khoom siv ALD thiab kaw qhov chaw noj mov. Thaum tshav kub kub mus rau qhov kub thiab txias, tshem tawm, thiab coj lub siab nyob rau hauv cov cuab yeej mus rau theem uas yuav tsum tau rau ntau lawm. Los ntawm kev sib piv qhia cov roj-theem precursor TMA thiab H2O pulses mus rau hauv cov tshuaj tiv thaiv chamber, thiab tshuaj adsorbing thiab reacting ntawm deposition substrate, ib tug deposition zaj duab xis AL2O3 yog generated. Thaum kawg, cov roj methane tso rau hauv cov khoom siv tau hloov nrog cov roj nitrogen, thiab cov khoom siv tau qhib kom tshem tawm cov silicon wafer.

Cov pa phem tseem ceeb hauv cov txheej txheem no yog cov pa roj methane (G8), uas yog muab rho tawm los ntawm lub tshuab nqus tsev twj thiab kho los ntawm stainless hlau silane combustion lub tog raj kheej thiab cov twj tso kua dej.

 

 

 

 

Pem hauv ntej txheej

 

 

Lub hauv paus ntsiab lus tseem ceeb yog siv lub teeb hluav taws xob ntau zaus los tsim cov plasma uas cuam tshuam rau cov txheej txheem ntawm cov yeeb yaj kiab tso tawm, txhawb kev decomposition, ua ke, excitation, thiab ionization ntawm cov roj molecules, thiab txhawb kev tsim cov pab pawg reactive. Vim lub xub ntiag ntawm NH3, nws yooj yim rau kev khiav thiab diffusion ntawm cov pab pawg neeg nquag, nce qhov kev loj hlob ntawm cov yeeb yaj kiab nyias, thiab txo qhov kub ntawm qhov tso tawm.

 

Cov tshuaj tiv thaiv tseem ceeb uas tshwm sim thaum lub sij hawm PECVD deposition ntawm silicon nitride oxide films yog:

 

SiH4+NH3+N2O →xSi2O2N4+N2↑+yH2↑

 

PECVD cov cuab yeej siv yeeb yaj kiab zoo yog cov cuab yeej kaw tsis zoo, hluav taws xob cua sov, thiab tuaj nrog lub tshuab nqus tsev twj tsis muaj roj. Thaum lub sij hawm tsim khoom, nitrogen yog thawj zaug ntim rau hauv cov khoom siv, thiab cov neeg hlau caj npab ua tiav cov silicon wafer loading. Tom qab cov cuab yeej ncav cuag lub siab sab nraud, lub qhov hluav taws xob thiab qhov hluav taws xob qhib, thiab lub nkoj graphite cia li nkag mus rau hauv cov khoom siv thiab kaw qhov inlet thiab qhov hluav taws xob. Nqus thiab ua ntau yam kev kuaj xyuas kev nyab xeeb. Tom qab paub meej tias muaj kev nyab xeeb, qhia silane thiab ammonia roj kom tiav cov nitrogen oxide silicon txheej hauv cov khoom siv. Tom qab txheej txheej tiav lawm, cov roj seem hauv cov kav dej tshwj xeeb thiab cov khoom siv tau tawm los ntawm cov roj nitrogen, thiab tom qab ntawd lub qhov hluav taws xob thiab qhov hluav taws xob qhib rau kev tawm. Tom qab txias, nkag mus rau cov txheej txheem sorting thiab mus rau cov txheej txheem tom ntej.

 

Kev Ntsuam Xyuas Cov Txheej Txheem Ntau Lawm: Daim ntawv tseem ceeb ntawm cov pa phem hauv cov txheej txheem tsim khoom no yog txheej txheej pov tseg roj (silane, roj ntau dhau, cov roj ammonia tshaj, hydrogen, nitrogen, thiab lwm yam) (G9), uas yog thawj zaug kho hauv stainless hlau silane combustion. lub tog raj kheej los ntawm qhov induced cua ntsawj ntshab system, thiab ces tawm tom qab raug kho los ntawm cov tshuaj tsuag ntauwd.

 

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Rov qab txheej

 

 

Cov tshuaj tiv thaiv tseem ceeb uas tshwm sim thaum lub sij hawm PECVD deposition ntawm silicon nitride oxide films yog:

 

SiH4+NH3+N2O →xSi2O2N4+N2↑+yH2↑

 

Cov khoom siv PECVD rov qab yog cov cuab yeej kaw tsis zoo, hluav taws xob cua sov, thiab tuaj nrog lub tshuab nqus tsev twj tsis muaj roj. Thaum lub sij hawm tsim khoom, nitrogen yog thawj zaug ntim rau hauv cov khoom siv, thiab cov neeg hlau caj npab ua tiav cov silicon wafer loading. Tom qab cov cuab yeej ncav cuag lub siab sab nraud, lub qhov hluav taws xob thiab qhov hluav taws xob qhib, thiab lub nkoj graphite cia li nkag mus rau hauv cov khoom siv thiab kaw qhov inlet thiab qhov hluav taws xob. Nqus thiab ua ntau yam kev kuaj xyuas kev nyab xeeb. Tom qab paub meej tias muaj kev nyab xeeb, qhia silane thiab ammonia roj kom tiav cov nitrogen oxide silicon txheej hauv cov khoom siv. Tom qab txheej txheej tiav lawm, cov roj seem hauv cov kav dej tshwj xeeb thiab cov khoom siv tau tawm los ntawm cov roj nitrogen, thiab tom qab ntawd lub qhov hluav taws xob thiab qhov hluav taws xob qhib rau kev tawm. Tom qab txias, nkag mus rau cov txheej txheem sorting thiab mus rau cov txheej txheem tom ntej.

 

Kev Ntsuam Xyuas Cov Txheej Txheem Ntau Lawm: Daim ntawv tseem ceeb ntawm cov pa phem hauv cov txheej txheem tsim khoom no yog txheej txheej pov tseg roj (silane, roj ntau dhau, cov roj ammonia tshaj, hydrogen, nitrogen, thiab lwm yam) (G9), uas yog thawj zaug kho hauv stainless hlau silane combustion. lub tog raj kheej los ntawm qhov induced cua ntsawj ntshab system, thiab ces tawm tom qab raug kho los ntawm cov tshuaj tsuag ntauwd.

 

 

 

 

Metalization

 

 

1) Kev luam ntawv

 

Thaum lub sij hawm luam ntawv, cov slurry yog saum lub vijtsam, thiab cov scraper yog nias rau ntawm lub vijtsam nrog lub siab, ua rau lub vijtsam deform thiab tuaj rau hauv qhov chaw ntawm silicon wafer. Lub slurry yog extruded thiab los rau hauv kev sib cuag nrog lub nto ntawm silicon wafer; Qhov saum npoo ntawm silicon wafer muaj lub zog adsorption, uas ua rau cov slurry tawm ntawm lub qhov mesh. Nyob rau ntawm lub sijhawm no, lub scraper khiav, thiab yav tas los deformed mesh phaj, nyob rau hauv zoo rov qab quab yuam, tso cai rau cov slurry smoothly ntog rau ntawm lub silicon wafer. Silver paste yog ib qho muab tshuaj txhuam zoo li luam ntawv paste ua los ntawm ultra-nplua thiab high-purity nyiaj thiab txhuas hmoov raws li cov hlau tseem ceeb, ntxiv nrog rau qee yam ntawm cov organic binder thiab resin ua cov neeg sawv cev pabcuam.

 

Ua ntej, rov qab electrode luam ntawv thiab ziab: Ua kom raug thiab luam tawm cov khoom siv hluav taws xob rov qab (xws li laser drilling txoj haujlwm) (nyiaj muab tshuaj txhuam) rau sab nraub qaum ntawm lub roj teeb, thiab sai sai qhuav nws ntawm qhov kub thiab txias kom ntseeg tau tias cov ntawv luam tawm rov qab electrode tsis puas. thaum lub sij hawm luam ntawv tom ntej.

 

Thib ob, luam ntawv thiab ziab ntawm cov kab sib chaws zoo nyob tom qab: Ua kom raug txoj hauj lwm thiab luam cov kab sib chaws zoo (nyiaj muab tshuaj txhuam) rau sab nraum qab ntawm lub roj teeb, thiab sai sai qhuav ntawm qhov kub thiab txias. Lub hom phiaj tseem ceeb yog hu rau silicon substrate, xa tawm tam sim no, thiab rov dope kom txo tau cov cab kuj recombination thiab nce boost.

 

Tom qab ntawd, tom qab dhau los ntawm lub flipper, lub roj teeb lub hlwb yog flipped los ntawm sab nraum qab mus rau pem hauv ntej tig upwards. Ua qhov zoo electrode luam ntawv thiab ziab: Ua kom raug txoj hauj lwm thiab luam ntawv zoo electrode paste (nyiaj paste) nyob rau pem hauv ntej ntawm lub roj teeb, thiab sai sai qhuav nws ntawm qhov kub thiab txias. Nws lub luag haujlwm tseem ceeb yog coj thiab thauj cov tam sim no sau los ntawm cov kab sib chaws zoo mus rau sab nraud circuits lossis nco.

 

Thaum kawg, luam ntawv thiab ziab ntawm cov kab hauv pem hauv ntej zoo: Ua kom raug txoj hauj lwm thiab luam tawm cov tshuaj txhuam hniav (nyiaj muab tshuaj txhuam) ntawm cov electrode pem hauv ntej ntawm lub roj teeb. Tom qab luam ntawv, tos kom nws nkag mus rau hauv lub qhov cub sintering rau cov khoom sintering, tsim kom muaj kev sib cuag zoo ohmic. Nws lub luag haujlwm tseem ceeb yog khaws cov khoom tam sim no, ua kom lub teeb nqus lub peev xwm ntawm lub roj teeb ntawm tes, thiab txhim kho kev hloov dua siab tshiab.

 

Lub ziab kub ntawm slurry thaum lub sij hawm ziab saum toj no yog nyob ib ncig ntawm 200 degree. Cov txheej txheem no yuav tsim cov pa roj carbon monoxide (G10), nrog rau cov pa phem tseem ceeb yog cawv esters xws li dodecane, xam raws li VOCs. Cov pa roj carbon monoxide tsim tawm thaum lub sijhawm luam ntawv yog sau los ntawm cov pa roj hood thiab kho los ntawm ob-theem series txuas nrog lub thawv qhib cov pa roj carbon adsorption, thiab thaum kawg tawm los ntawm cov yeeb nkab tso tawm. Lub qhov tso pa tawm yuav tsum tau ua kom huv si tsis tu ncua thiab tshem tawm kom tswj tau nws txoj kev nqus dej.

 

 

2) Sintering

 

Sintering yog txheej txheem ntawm sintering lub qhov rooj zoo zoo muab tshuaj txhuam luam tawm ntawm silicon wafer rau hauv lub roj teeb ntawm qhov kub thiab txias, tso cai rau cov electrode rau ntawm qhov chaw, tsim kom muaj kev sib cuag zoo thiab hluav taws xob zoo, thaum kawg ua rau kev sib cuag ohmic. nruab nrab ntawm cov electrode thiab silicon wafer nws tus kheej.

 

Cov ntawv luam tawm silicon wafers yog sintered siv lub tshuab hluav taws xob cua sov, uas tau muab faib ua ntau qhov chaw kub. Thaum lub sij hawm sintering txheej txheem, cov silicon wafers tsim sab sauv thiab sab electrodes, thiab qhov siab tshaj plaws sintering kub yog nyob nruab nrab ntawm 700 ~ 800 degree. Thaum cov txheej txheem no, cov kuab tshuaj organic xws li cawv ester dodecane nyob rau hauv slurry kiag li evaporate rau cov organic pov tseg gas (G11), uas yog xam raws li VOCs. Tom qab ntawd, nws tau hlawv tag nrho thiab kho los ntawm cov cuab yeej tsim-hauv high-temperature combustion ntauwd ntaus ntawv, thiab ua ke nrog cov luam ntawv pov tseg roj, nws yog adsorbed thiab kho los ntawm ob-theem series txuas activated carbon adsorption box. Tom qab adsorption, nws yog tawm los ntawm cov yeeb nkab.

 

 

3) Hluav taws xob txhaj tshuaj

 

Tom qab sintering lub roj teeb lub hlwb, txoj kev ncaj qha txhaj cov nqa khoom (rov qab txhaj tshuaj ncaj qha tam sim no) yog siv los hloov cov nqi ntawm hydrogen nyob rau hauv lub cev silicon, uas tuaj yeem ua tau zoo passivate decaying boron oxygen complex thiab hloov mus rau hauv ib tug ruaj khov regenerated. xeev, thaum kawg ua tiav lub hom phiaj ntawm kev tiv thaiv lub teeb lwj.

 

 

 

 

Kuaj ntim

 

 

Tom qab ua tiav ntawm lub hnub ci ntawm lub hnub ci, cov cuab yeej ntsuas yuav raug siv los ntsuas qhov ntsuas hluav taws xob tsis zoo ntawm lub hnub ci cell (xws li ntsuas nws IV nkhaus thiab lub teeb hloov pauv). Tom qab qhov kev xeem tiav lawm, lub roj teeb yuav raug muab faib ua ntau theem raws li qee cov qauv. Thaum tus naj npawb ntawm cov roj teeb hauv ib qib nce mus txog qhov txwv, lub cuab yeej yuav ceeb toom tus neeg teb xov tooj kom coj lawv tawm mus rau ntim. Cov cuab yeej tseem muaj qhov ua kom pom cov khoom tawg, uas tshem tawm cov khoom tawg sai sai thaum tshawb pom, tsis yog kuaj lawv li cov roj teeb ua tiav, ua rau cov roj teeb khib nyiab (S2).

Xa kev nug